View MW6IC2240NBR1_846352.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Technical Data
Document Number: MW6IC2240N Rev. 1, 1/2006
RF LDMOS Wideband Integrated Power Amplifiers
The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Final Application * Typical 2 -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 Watts Avg., Full Frequency Band (2110 -2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 28 dB Power Added Efficiency -- 15% IM3 @ 10 MHz Offset -- -43 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset -- -46 dBc in 3.84 MHz Bandwidth Driver Application * Typical 2 -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 300 mA, IDQ2 = 320 mA, Pout = 25 dBm, Full Frequency Band (2110 2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 29 dB IM3 @ 10 MHz Offset -- -59 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset -- -62 dBc in 3.84 MHz Bandwidth * Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power * Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW Pout. * Characterized with Series Equivalent Large -Signal Impedance Parameters and Common Source Scattering Parameters * On -Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function * Integrated ESD Protection * 200C Capable Plastic Package * N Suffix Indicates Lead -Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW6IC2240NBR1 MW6IC2240GNBR1
2110 -2170 MHz, 4.5 W AVG., 28 V 2 x W -CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1329-09 TO-272 WB-16 PLASTIC MW6IC2240NBR1
CASE 1329A-03 TO-272 WB-16 GULL PLASTIC MW6IC2240GNBR1
VDS1 RFin RFout/VDS2
GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
RFout / VDS2
VGS1 VGS2 VDS1
Quiescent Current Temperature Compensation
13 12
NC GND
Figure 1. Functional Block Diagram
(Top View) Note: Exposed backside flag is source terminal for transistors.
Figure 2. Pin Connections
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW6IC2240NBR1 MW6IC2240GNBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value -0.5, +68 -0.5, +6 -65 to +200 200 23 Unit Vdc Vdc C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case W-CDMA Application (Pout = 4.5 W Avg.) W-CDMA Application (Pout = 40 W CW) Stage 1, 28 Vdc, IDQ = 210 mA Stage 2, 28 Vdc, IDQ = 370 mA Stage 1, 28 Vdc, IDQ = 110 mA Stage 2, 28 Vdc, IDQ = 370 mA Symbol RJC 1.8 1.0 2.0 0.87 Value (1,2) Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1A (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110-2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Power Added Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps PAE IM3 ACPR IRL 25.5 13.7 -- -- -- 28 15 -43 -46 -15 30 -- -40 -43 -10 dB % dBc dBc dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued)
MW6IC2240NBR1 MW6IC2240GNBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, 2110 MHzIQT GF Delay
-- -- -- -- --
5 0.2 1 2.8 9
-- -- -- -- --
% dB ns
Table 6. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ1 = 110 mA, IDQ2 = 370 mA, 2110 MHz1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/ApplicationNotes - AN1977.
MW6IC2240NBR1 MW6IC2240GNBR1 RF Device Data Freescale Semiconductor 3
VD2 VD1 C13 RF INPUT 1 2 3 NC 4 NC 5 NC 6 C9 VG1 C11 VG2 C12 R2 C10 C5 C7 R1 7 NC 8 9 10 11 C2 Quiescent Current Temperature Compensation Z10 NC 13 12 C3 C8 DUT 16 NC 15 Z9 14 Z4 C1 Z5 Z6 Z7 Z8 C4 C6
Z1
Z2
Z3
RF OUTPUT
Z1* Z2* Z3 Z4* Z5* Z6*
1.73 x 0.090 Microstrip 0.47 x 0.090 Microstrip 0.13 x 0.040 Microstrip 0.22 x 0.315 Microstrip 0.34 x 0.315 Microstrip 0.34 x 0.090 Microstrip
Z7* Z8 Z9, Z10 PCB
0.94 x 0.090 Microstrip 0.34 x 0.090 Microstrip 1.00 x 0.080 Microstrip Taconic TLX8-0300, 0.030, r = 2.55
* Variable for tuning
Figure 3. MW6IC2240NBR1(GNBR1) Test Circuit Schematic Table 7. MW6IC2240NBR1(GNBR1) Test Circuit Component Designations and Values
Part C1, C2 C3 C4, C5 C6, C7, C10, C11, C12, C13 C8 C9 R1 R2 Description 1.5 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitor 6.8 pF 100B Chip Capacitors 4.7 F Chip Capacitors (1812) 8.2 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 18 kW, 1/4 W Chip Resistor (1206) 8.2 kW, 1/4 W Chip Resistor (1206) Part Number 100B1R5BW 100B1R8BW 100B6R8CW C4532X5R1H475MT 100B8R2CW 100B0R5BW Manufacturer ATC ATC ATC TDK ATC ATC
MW6IC2240NBR1 MW6IC2240GNBR1 4 RF Device Data Freescale Semiconductor
VD1
VD2 C13 C4 C6
CUT OUT AREA
MW6IC2240, Rev. 1 C3 C1
C9
C8 C2
C10 C12 C11 R1 VG1 R2 VG2
C5
C7
Figure 4. MW6IC2240NBR1(GNBR1) Test Circuit Component Layout
MW6IC2240NBR1 MW6IC2240GNBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
35 PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) VDD = 28 Vdc, Pout = 4.5 W (Avg.) IDQ1 = 210 mA, IDQ2 = 370 mA Two-Tone Measurements, 10 MHz Tone Spacing Gps IRL 0
25
-22
20 PAE 15 IM3 ACPR 10 2000 2050 2100 2150 2200
-33
-44
-55 2250
f, FREQUENCY (MHz)
Figure 5. 2 -Carrier W-CDMA Wideband Performance @ Pout = 4.5 Watts Avg.
35 PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 30 25 20 15 ACPR 10 5 0 2050 PAE -60 -70 -80 2250 IRL Gps VDD = 28 Vdc, Pout = 0.6 W (Avg.) IDQ1 = 300 mA, IDQ2 = 320 mA Two-Tone Measurements, 10 MHz Tone Spacing -10 -20 -30 -40 IM3 -50 IM3 (dBc), ACPR (dBc) IRL, INPUT RETURN LOSS (dB) 210 mA 29 VDD = 28 Vdc Pout = 1 W CW IDQ2 = 370 mA 140 mA 2150
2100
2150 f, FREQUENCY (MHz)
2200
Figure 6. 2 -Carrier W-CDMA Wideband Performance @ Pout = 0.6 Watts Avg.
31 IDQ2 = 530 mA 30 Gps, POWER GAIN (dB) 29 28 27 210 mA 26 25 24 23 0.1 VDD = 28 Vdc, IDQ = 210 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 1 10 100 450 mA Gps, POWER GAIN (dB) 370 mA 290 mA 31 IDQ1 = 280 mA 30
28
27 26 2000
2050
2100
IM3 (dBc), ACPR (dBc) IRL, INPUT RETURN LOSS (dB)
30
-11
2200
2250
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Figure 7. Two -Tone Power Gain versus Output Power
Figure 8. Frequency Response versus Current
MW6IC2240NBR1 MW6IC2240GNBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 -70 -80 -90 0.1 VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 3rd Order -10 -15 -20 -25 -30 -35 5th Order -40 -45 -50 0.1 7th Order VDD = 28 Vdc, Pout = 20 W (PEP), IDQ1 = 210 mA, IDQ2 = 370 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 3rd Order
5th Order 7th Order
1
10
100
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO-TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products versus Output Power
55 P6dB = 48 dBm (63 W) 53 Pout, OUTPUT POWER (dBm) P3dB = 47.5 dBm (56 W) 51 49 47 45 43 41 39 10 12 14 16 18 20 P1dB = 47 dBm (50 W)
Figure 10. Intermodulation Distortion Products versus Tone Spacing
Ideal
Actual
VDD = 28 Vdc, IDQ1 = 110 mA IDQ2 = 370 mA, Pulsed CW 8 sec(on), 1 msec(off) f = 2140 MHz 22 24 26 28 30
Pin, INPUT POWER (dBm)
Figure 11. Pulse CW Output Power versus Input Power
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 0.1 1 ACPR PAE TC = -30_C 25_C 85_C
VDD = 28 Vdc IDQ1 = 210 mA, IDQ2 = 370 mA f1 = 2135 MHz, f2 = 2145 MHz
-25 -30 IM3 (dBc), ACPR (dBc) -35 -40 Gps -45 -50
2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
-55 -60
10
-65 100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. 2 -Carrier W-CDMA ACPR, IM3, Power Gain and Power Added Efficiency versus Output Power MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
36 32 Gps, POWER GAIN (dB) 28 24 20 16 12 0.1 TC = -30_C 25_C 85_C VDD = 28 Vdc IDQ1 = 210 mA, IDQ2 = 370 mA f = 2140 MHz PAE 85_C 30 Gps 20 10 0 1 10 100 Pout, OUTPUT POWER (WATTS) CW -30_C 50 25_C 40 60 PAE, POWER ADDED EFFICIENCY (%) 30 29 Gps, POWER GAIN (dB) 28 27 26 32 V 25 24 0 16 V VDD = 12 V 10 20 20 V 30 40 24 V 28 V 50 60 IDQ1 = 210 mA IDQ2 = 370 mA f = 2140 MHz
Pout, OUTPUT POWER (WATTS) CW
Figure 13. Power Gain and Power Added Efficiency versus Output Power
1.E+09 MTTF FACTOR (HOURS X AMPS2)
Figure 14. Power Gain versus Output Power
1.E+08
2nd Stage
1.E+07
1st Stage
1.E+06 90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 15. MTTF Factor versus Junction Temperature
MW6IC2240NBR1 MW6IC2240GNBR1 8 RF Device Data Freescale Semiconductor
Zo = 50 f = 2050 MHz
f = 2230 MHz f = 2050 MHz
Zin
f = 2230 MHz Zload
VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 W Avg. f MHz 2050 2080 2110 2140 2170 2200 2230 Zin Zin 33.723 + j3.048 38.052 + j8.201 45.972 + j12.306 59.075 + 9.272 68.368 - j3.227 67.177 - j19.071 58.213 - j28.879 Zload 7.971 - j5.705 7.559 - j5.532 7.117 - j5.345 6.642 - j5.119 6.132 - j4.891 5.626 - j4.619 5.118 - j4.305
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Z
in
Z
load
Figure 16. Series Equivalent Input and Load Impedance MW6IC2240NBR1 MW6IC2240GNBR1 RF Device Data Freescale Semiconductor 9
Table 8. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system) IDQ1 = 210 mA, IDQ2 = 370 mA
f MHz MH 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 |S11| 0.788 0.713 0.584 0.389 0.239 0.221 0.216 0.467 0.539 0.635 0.716 131.360 113.326 86.885 41.593 -54.753 -162.180 -38.746 -113.440 -153.020 -171.630 169.263 |S21| 0.0013 0.0012 0.0007 0.0006 0.0022 0.0036 0.0057 0.0043 0.0044 0.0044 0.0049 S21 63.602 42.219 55.210 117.726 122.409 118.178 68.626 64.758 48.498 52.829 56.398 |S12| 0.0020 0.0094 0.1180 0.6690 4.9300 21.396 19.739 7.8281 3.8868 2.4331 1.6119 S12 25.353 10.742 -39.325 -92.822 -164.584 49.432 -105.946 166.887 113.310 69.460 29.135 |S22| 0.9940 0.9910 0.9850 0.9780 0.9310 0.6120 0.7530 0.9010 0.9350 0.9480 0.9570 S22 172.664 169.954 166.452 161.752 152.388 151.441 -177.800 171.868 167.252 164.137 161.593
MW6IC2240NBR1 MW6IC2240GNBR1 10 RF Device Data Freescale Semiconductor
NOTES
MW6IC2240NBR1 MW6IC2240GNBR1 RF Device Data Freescale Semiconductor 11
NOTES
MW6IC2240NBR1 MW6IC2240GNBR1 12 RF Device Data Freescale Semiconductor
NOTES
MW6IC2240NBR1 MW6IC2240GNBR1 RF Device Data Freescale Semiconductor 13
PACKAGE DIMENSIONS
2X
B
PIN ONE INDEX
E1
aaa
M
r1 CA B
A
NOTE 6
4X
aaa
M
b1 CA
e1 e2 D1 e b2 CA
10X 4X
6X
e3 b3 aaa M C A DM
2X
aaa
M
b aaa
M
CA
E
DATUM PLANE
H A
c1
C
SEATING PLANE
F Y
ZONE "J"
E2
Y
A1 7 A2
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329-09 ISSUE K TO -272 WB-16 PLASTIC MW6IC2240NBR1
MW6IC2240NBR1 MW6IC2240GNBR1 14 RF Device Data Freescale Semiconductor
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
N VIEW Y-Y
DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 --- .270 --- .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 --- 6.86 --- 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10
r1 aaa M C A B
2X PIN ONE INDEX
E1
B
A
4X
aaa
M
b1 CA
e1 e2 D1 e b2 CA
10X 4X
6X
e3
2X
b3 aaa M C A
D
M
aaa
M
aaa
M
b CA
E
DETAIL Y DATUM PLANE
H A c1 E2 Y Y C
SEATING PLANE
A2
INCHES MIN MAX .100 .104 .001 .004 .099 .110 .928 .932 .810 BSC .429 .437 .353 .357 .346 .350 .018 .024 .01 BSC .600 --- .270 --- .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 2 8 .004 MILLIMETERS MIN MAX 2.54 2.64 0.02 0.10 2.51 2.79 23.57 23.67 20.57 BSC 10.90 11.10 8.97 9.07 8.79 8.89 4.90 5.06 0.25 BSC 15.24 --- 6.86 --- 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 2 8 .10
L1
GAGE PLANE
t
L DETAIL Y
A1
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SINK.
CASE 1329A-03 ISSUE D TO -272 WB-16 GULL PLASTIC MW6IC2240GNBR1
MW6IC2240NBR1 MW6IC2240GNBR1 RF Device Data Freescale Semiconductor 15
EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE
N E2 VIEW Y-Y
DIM A A1 A2 D D1 E E1 E2 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa
NOTE 6
How to Reach Us:
Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-441-2447 or 303-675-2140 Fax: 303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS- compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non- Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp.
MW6IC2240NBR1 MW6IC2240GNBR1
Rev. 16 1, 1/2006 Document Number: MW6IC2240N
RF Device Data Freescale Semiconductor

▲Up To Search▲

Price & Availability of MW6IC2240NBR1

	To Download MW6IC2240NBR1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .